G20N60, 600 V 40 A N‑Channel IGBT, UFS-Series, TO-220 Package

The G20N60 is a high-efficiency N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for fast switching and high-voltage applications. With a 600 V breakdown voltage and 40 A continuous collector current, it is optimized for use in inverters, power supplies, motor control circuits, and industrial switching systems. This IGBT belongs to the UFS-Series, combining the advantages of low conduction loss with fast switching capability. Its TO-220 package ensures efficient thermal performance and compatibility with a wide range of through-hole circuit designs. With robust avalanche energy capability and high current handling, it is a reliable component for demanding power applications.

Key Features:

• 600 V collector-emitter voltage for high-voltage applications
• 40 A continuous collector current supports heavy loads
• Fast switching speeds reduce switching losses
• TO-220 package for efficient thermal management and easy mounting
• Low saturation voltage improves overall efficiency
• Rugged and reliable for industrial-grade power switching