IRFB4710,N-Channel HEXFET Power MOSFET,100V,75A,TO-220

The IRFB4710 is an N-Channel HEXFET Power MOSFET designed to deliver high efficiency and performance for switching applications. With a Drain-to-Source Breakdown Voltage of 100V, this MOSFET can handle up to 75A of continuous current at 25C. The device has a very low on-state resistance, ensuring lower power losses and improved efficiency in DC-DC converters, motor control circuits, and uninterruptible power supplies. Packaged in the TO-220 format, it is suitable for through-hole mounting, making it versatile for various industrial applications.

The IRFB4710 features a low gate-to-drain charge, which helps reduce switching losses, and it is fully characterized for capacitance and avalanche energy, simplifying the design process for engineers. It operates over a wide temperature range, ensuring reliability in demanding environments.

• Continuous Drain Current of 75A at 25C (VGS at 10V)
• Drain-to-Source Breakdown Voltage (VDS) of 100V
• Maximum Power Dissipation of 200W at 25C
• Low Gate-to-Source Threshold Voltage (VGS) of ±20V
• High switching speed with low gate charge characteristics
• Operating Junction Temperature Range of -55C to 175C