IRF3808S,HEXFET N-Channel Power MOSFET - 75V,106A,0.007Ohm

The IRF3808S is a high-performance N-channel HEXFET Power MOSFET developed by International Rectifier. This device leverages advanced planar stripe technology to deliver ultra-low on-resistance, fast switching speeds, and high thermal stability. With a maximum drain-source voltage of 75V, continuous drain current of 106A, and an incredibly low Rds(on) of 0.007Ohm, it is ideally suited for high-efficiency power applications such as motor drives, DC-DC converters, and high-current switching.

The IRF3808S is rated for operation at junction temperatures up to 175C, ensuring exceptional reliability under demanding conditions. Its robust design allows repetitive avalanche operation at full load, making it an excellent choice for industrial and high-power applications. Available in TO-262 and D2Pak packages, this MOSFET provides optimal thermal performance and ease of mounting in PCB designs.

Key Features :

• High Current Capability: Supports continuous drain current up to 106A.
• Low On-Resistance: Ultra-low Rds(on) of 0.007Ohm minimizes conduction losses.
• High Temperature Tolerance: Operates at junction temperatures up to 175C.
• Fast Switching: Optimized for high-speed switching applications with minimal losses.
• Lead-Free and RoHS Compliant: Suitable for environmentally friendly designs.
• Applications: Ideal for industrial motor drives, DC-DC converters, and high-current power systems.