H5551 ,NPN Silicon Transistor, 160V VCEO, 600mA IC

The H5551 is an NPN silicon transistor designed for use in amplifier circuits. Encased in a compact TO-92 package, this transistor provides reliable performance in small, space-efficient designs. With a maximum Collector-Emitter Voltage (VCEO) of 160V and a Collector Current (IC) rating of 600mA, the H5551 is suitable for various applications requiring high voltage and current handling. Its low saturation voltages and high current gain make it an excellent choice for efficient amplification and switching circuits.

The transistor's robust design allows for efficient heat dissipation, with a maximum power dissipation of 625mW, while its wide operating temperature range ensures reliable operation under diverse environmental conditions. With high DC current gain values (80–280) and a current gain-bandwidth product of up to 300MHz, the H5551 is optimized for performance and stability in amplifier applications.

Key Features :

• High Voltage Capability: Maximum 160V Collector-Emitter Voltage (VCEO) for robust high-voltage operation.
• Compact TO-92 Package: Space-saving design suitable for small electronic circuits.
• High Current Handling: Supports up to 600mA Collector Current (IC).
• Low Saturation Voltage: Collector-Emitter Saturation Voltage (VCE(sat)) as low as 0.15V.
• Wide DC Current Gain Range: Gain values between 80 and 280 ensure stable amplification.
• High Frequency Response: Current Gain-Bandwidth Product (fT) up to 300MHz for high-speed applications.