2SK1357, N-Channel MOSFET, TO-3P Package

The 2SK1357 is an N-channel MOSFET designed for high-voltage, high-speed power switching applications. With a drain-source voltage rating of 900 V and a continuous drain current of 5 A, it is well-suited for medium power applications requiring high voltage handling. The MOSFET's low on-resistance of 2.8 Ω reduces conduction losses, while its fast switching speed, characterized by a rise time of 18 ns, enhances performance in high-speed circuits. The device also features a low total gate charge of 60 nC, facilitating efficient switching. Encased in a standard TO-3P package, the 2SK1357 offers robust thermal performance with a maximum power dissipation of 125 W, making it a reliable choice for various power management applications.

• High Drain-Source Voltage: Withstands up to 900 V, suitable for high-voltage applications.
• Moderate Drain Current: Supports up to 5 A, ideal for medium power requirements.
• Low On-Resistance: Features an R_DS(on) of 2.8 Ω, minimizing conduction losses.
• Fast Switching Speed: Rise time of 18 ns, enhancing efficiency in high-speed applications.
• Low Gate Charge: Total gate charge of 60 nC, facilitating efficient switching.
• Robust Power Dissipation: Capable of dissipating up to 125 W, ensuring reliability under various conditions.