2SK2645,N-Channel MOSFET,TO-220F,600V,1.2A

The 2SK2645 is a high-speed N-Channel Power MOSFET from Fuji Electric, designed for efficient high-voltage switching and general-purpose amplification. It offers a drain-source breakdown voltage (Vds) of 600V and a continuous current drain (Id) of 1.2A, making it ideal for switching regulators, DC-DC converters, and general power amplifiers.

Housed in a TO-220F through-hole package, the 2SK2645 features a low on-resistance (RDS(on)) of 2.5Ohm, ensuring minimal power loss during operation. The gate threshold voltage (Vgs(th)), ranging between 3.5V and 4.5V, makes it compatible with a wide range of control circuits. With a power dissipation capacity of 50W and a thermal resistance of 2.5C/W (channel-to-case), this MOSFET ensures efficient thermal management and reliable performance under load.

The 2SK2645 is repetitive avalanche-rated and provides excellent durability against transient conditions. Its fast switching capabilities and high breakdown voltage make it a reliable choice for industrial and consumer electronics requiring robust performance in high-voltage circuits.

Key Features :

• High Voltage Tolerance: Supports up to 600V drain-source breakdown voltage.
• Efficient Current Handling: Continuous current drain of 1.2A with minimal power loss.
• Repetitive Avalanche Rated: Ensures durability under transient conditions.
• Low On-Resistance: RDS(on) of 2.5Ohm for reduced power dissipation.
• Thermal Efficiency: TO-220F package with thermal resistance of 2.5C/W (channel-to-case).
• Wide Operating Range: Functions reliably from -55C to +150C.