2SK2996, N-Channel Power MOSFET, 600V 10A, TO-220F-3

The 2SK2996 is a high-performance N-Channel MOSFET designed for high-speed, high-voltage switching applications. With a Drain-Source Voltage (Vds) rating of 600V and a Continuous Drain Current (Id) of 10A, this MOSFET is perfect for use in chopper regulators, DC-DC converters, and motor drive circuits. Its low on-resistance (RDS(on)) of 0.74Ω ensures efficient power handling, while the high forward transfer admittance (|Yfs| = 6.8 S) provides excellent switching performance. The 2SK2996 comes in a robust TO-220F-3 package, making it easy to integrate into through-hole designs. It also features a wide operating temperature range of -55°C to +150°C, ensuring reliable performance in harsh environments. Whether you're designing industrial equipment, automotive systems, or high-efficiency power supplies, the 2SK2996 offers the durability and performance you need.

• High Voltage Rating: Supports up to 600V Drain-Source Voltage (Vds), ideal for high-voltage switching applications.
• Low On-Resistance: RDS(on) = 0.74Ω (Typ.) at VGS = 10V, ensuring efficient power handling and minimal heat generation.
• High Forward Transfer Admittance: |Yfs| = 6.8 S (Typ.), providing excellent gain and switching performance.
• Low Leakage Current: IDSS = 100μA (Max.) at VDS = 600V, ensuring minimal power loss in off-state.
• Enhancement-Mode Operation: Vth = 2.0~4.0V, making it easy to drive with standard logic levels.
• Avalanche Energy Rated: Capable of handling single pulse avalanche energy up to 252mJ, providing robust protection in inductive load scenarios.