2SK1012, N-Channel Power MOSFET, TO-220 Package

The 2SK1012 is an N-channel enhancement mode power MOSFET designed for high-voltage, high-speed power switching applications. With a drain-source voltage rating of 500 V and a continuous drain current of 10 A, it is well-suited for high-power applications such as power supplies, converters, and motor drivers. The MOSFET's low on-resistance reduces conduction losses, while its fast switching capabilities enhance performance in high-speed circuits. Encased in a standard TO-220 package, the 2SK1012 offers robust thermal performance, making it a reliable choice for various power management applications.

• High Drain-Source Voltage: Withstands up to 500 V, suitable for high-voltage applications.
• High Continuous Drain Current: Rated at 10 A, ideal for substantial power requirements.
• Low On-Resistance: Minimizes conduction losses, enhancing efficiency.
• Fast Switching Speed: Optimized for rapid switching applications, improving performance.
• Robust Power Dissipation: Capable of dissipating significant power, ensuring reliability under various conditions.
• Standard TO-220 Package: Facilitates easy mounting and efficient heat dissipation.