BUZ80,N-Channel MOSFET,800V,3.4A

The BUZ80 is an N-Channel Enhancement Mode Power MOSFET designed for high-current, high-speed switching applications. With a maximum drain-source voltage of 800V and a continuous drain current rating of 3.4A, it is suitable for consumer and industrial lighting, DC-AC inverters for welding equipment, and uninterruptible power supplies (UPS). This device features a typical RDS(on) of 3.3Ohm, low gate charge, and excellent avalanche energy ratings, ensuring superior reliability in demanding environments.

This MOSFET's robust design incorporates avalanche ruggedness technology, making it 100% avalanche tested and capable of handling repetitive avalanche currents. It has a low input capacitance, which allows for efficient high-frequency switching, and offers comprehensive application-oriented characterization. Additionally, the BUZ80 is available in the TO-220 package, ensuring easy mounting and effective thermal management

Key Features :

• Maximum drain-source voltage (VDS): 800V for high-voltage applications.
• Continuous drain current (ID): Rated at 3.4A at 100C, suitable for demanding load conditions.
• Avalanche energy capabilities: 100% avalanche tested with repetitive energy ratings up to 4.8mJ.
• Typical RDS(on): 3.3Ohm for low conduction losses and efficient operation.
• TO-220 package: Provides efficient thermal dissipation and easy PCB mounting.
• Wide temperature range: Operates effectively between -65C to +150C.