IPB107N20N3G,N-Channel Power MOSFET,200V,88A

The IPB107N20N3G N-Channel Power MOSFET by Infineon Technologies is designed for high-efficiency switching applications, providing robust performance with a drain-source breakdown voltage of 200V and a continuous drain current of 88A. This MOSFET features very low on-state resistance (RDS(on)) of just 10.7 mOhm (max), ensuring minimal power loss during operation. It is highly optimized for synchronous rectification and high-frequency switching applications in DC-DC converters, telecom systems, and other industrial equipment.

With its TO-263-2 surface mount package, the IPB107N20N3G ensures excellent thermal dissipation, making it ideal for applications requiring high current and power handling. The device supports fast switching times, high avalanche energy capability, and meets RoHS and IEC standards for reliability and safety.

Key Features :

• High Voltage Capability: Drain-Source Breakdown Voltage rated at 200V.
• High Current Handling: Continuous Drain Current of 88A at 25C.
• Low On-State Resistance: Typical RDS(on) of 9.9 mOhm, ensuring low conduction losses.
• Dynamic Characteristics: Fast switching speeds with rise time of 18ns and fall time of 11ns.
• Thermal Management: Excellent thermal resistance of 0.5C/W.
• Surface Mount Package: TO-263-2 package ensures reliable performance in compact designs.