2SK903, N-Channel Power MOSFET, TO-220F

The 2SK903 is an N-channel enhancement mode power MOSFET designed for high-speed switching applications. With a drain-source voltage rating of 800 V and a continuous drain current of 3 A, it is well-suited for high-voltage, medium power applications. The MOSFET's low on-resistance of 4 Ω reduces conduction losses, while its fast switching speed, characterized by a turn-on time of 60 ns, enhances performance in high-speed circuits. Encased in a standard TO-220F package, the 2SK903 offers robust thermal performance with a maximum power dissipation of 40 W, making it a reliable choice for various power management applications.

• High Drain-Source Voltage: Withstands up to 800 V, suitable for high-voltage applications.
• Moderate Continuous Drain Current: Rated at 3 A, ideal for medium power requirements.
• Low On-Resistance: Features an R_DS(on) of 4 Ω, minimizing conduction losses.
• Fast Switching Speed: Turn-on time of 60 ns, enhancing efficiency in high-speed applications.
• Robust Thermal Performance: Maximum power dissipation of 40 W, ensuring reliability under various conditions.
• Standard TO-220F Package: Facilitates easy mounting and efficient heat dissipation.