BSS125, N-Channel Enhancement Mode MOSFET, TO-92

The BSS125 is an N-channel enhancement mode MOSFET designed for small-signal applications. With a high drain-source voltage rating of 600 V and a continuous drain current of 100 mA, it is suitable for high-voltage, low-current switching tasks. The device's low on-resistance of 45 Ω ensures efficient performance, while its gate threshold voltage range of 1.5 V to 2.5 V allows for operation with standard logic levels. Encased in a compact TO-92 package, the BSS125 is ideal for space-constrained applications in consumer electronics and industrial equipment.

• High Drain-Source Voltage: Capable of withstanding up to 600 V, suitable for high-voltage applications.
• Continuous Drain Current: Rated for 100 mA, making it ideal for low-power switching.
• Low On-Resistance: Features an R_DS(on) of 45 Ω, ensuring efficient operation.
• Gate Threshold Voltage: Operates with a V_GS(th) range of 1.5 V to 2.5 V, allowing for low-voltage drive.
• Compact TO-92 Package: Provides a small footprint for space-constrained designs.
• Enhancement Mode Operation: Ensures the device is normally off when the gate-source voltage is zero, enhancing safety.