IRFP350, N-Channel Power MOSFET, TO-247

The IRFP350 is an N-Channel Power MOSFET designed for high-voltage and high-power switching applications. With a 400V drain-source breakdown voltage, it is ideal for demanding circuits such as switching power supplies, motor control, and high-speed power switching applications. The low gate-source threshold voltage ensures efficient operation with reduced gate drive requirements. Its 16A continuous drain current and 190W power dissipation make it suitable for applications requiring high reliability and performance. The TO-247 package provides excellent heat dissipation, making it ideal for power management in industrial and commercial applications.

• High drain-source breakdown voltage of 400V for robust power applications.
• Continuous drain current of 16A at 25°C for high-current capability.
• Low gate-source threshold voltage for efficient switching.
• Power dissipation of 190W for enhanced thermal performance.
• Operating temperature range of -55°C to +150°C.
• TO-247 package for effective heat dissipation and reliability.