IRFP260N, N-Channel Power MOSFET, TO-247 Package

The IRFP260N is a fifth-generation HEXFET® Power MOSFET from International Rectifier, offering superior switching performance and energy efficiency. With a drain-source voltage of 200V and current handling of 50A, it is well-suited for high-power converters, motor control, and SMPS systems. Its TO-247 package enhances thermal management, making it a reliable choice for demanding industrial and high-current environments.

Key Features:

• High Current Capability: Continuous drain current up to 50A @ 25°C.
• High Voltage Rating: Can withstand drain-source voltages up to 200V.
• Low RDS(on): On-resistance as low as 0.04 Ω improves efficiency and reduces heat.
• Fast Switching: Typical total gate charge of 234 nC and rise/fall times under 60 ns.
• Fully Avalanche Rated: Capable of handling repetitive avalanche energy.
• Robust Thermal Performance: TO-247 package supports up to 300W power dissipation.

Additional Specifications:

• Mounting Style: Through-Hole
• Continuous Current Drain (Id): 50A At 25°C,35A At 100°C
• Drain-Source Breakdown Voltage (Vds): 200V
• Gate-Source Threshld Voltage (Vgs th): 2-4V
• Power Dissipation: 300W
• Operating Temprature: -55+175°C