IRFZ34N ,N-Channel Power MOSFET ,55V,26A - TO-220AB

The IRFZ34N N-Channel Power MOSFET is a highly efficient and reliable component designed for a wide variety of applications in the power electronics industry. Manufactured using advanced process technology, it offers low on-resistance and fast switching capabilities, making it ideal for use in high-speed switching devices. With a drain-source voltage rating of 55V and a current rating of 26A, the IRFZ34N can handle significant power loads, ensuring stable operation in demanding conditions.

Key Features :

• Advanced Process Technology: Designed with the latest HEXFET technology for optimized performance.
• High Power Capacity: Handles up to 55V drain-source voltage and 26A of continuous current.
• Low On-Resistance: Features an Rds(on) of only 0.040Ohm for reduced conduction losses.
• Fast Switching Speed: Enables quick transitions in high-speed switching applications.
• Wide Operating Temperature Range: Withstands temperatures from -55C to 175C, making it suitable for harsh environments.
• TO-220AB Package: Provides easy mounting, superior thermal dissipation, and compact size.