IRFB4019 MOSFET, N-Channel, 150V, 51A, TO-220AB

The IRFB4019 is a digital audio MOSFET, optimized for Class-D audio amplifier applications. It features low on-resistance, high efficiency, and excellent thermal performance, making it ideal for use in high-power audio amplifiers. The MOSFET is capable of delivering up to 200W per channel into an 8Ω load in half-bridge configuration amplifier designs. It offers low gate charge (13 nC) and a low gate-to-source threshold voltage of 3.0V to 4.9V, improving efficiency and reducing switching losses. Additionally, its 175C operating junction temperature ensures reliable performance even in harsh operating conditions. The TO-220AB package provides an industry-standard, robust design for ease of use in a variety of applications, such as audio amplifiers, DC-DC converters, and motor control systems.

• Optimized for Class-D Audio Applications: Specifically designed for audio amplifiers, enhancing efficiency and reducing THD (Total Harmonic Distortion).
• High Power Rating: Can deliver up to 200W per channel into an 8Ω load in a half-bridge amplifier configuration.
• Low On-Resistance (RDS(on)): Features an on-resistance of 80 mΩ, improving efficiency and reducing power loss.
• Low Gate Charge (QG): With a total gate charge of 13 nC, this MOSFET enables fast switching times for high-performance applications.
• 175C Operating Junction Temperature: Ensures high durability and reliable performance in demanding environments.
• TO-220AB Package: Industry-standard packaging that provides easy integration into circuit designs.