BUZ90A,Power Transistor-600V,4A,TO-220AB Package

The BUZ90A is an N-channel SIPMOS Power Transistor designed for high-efficiency switching applications. This transistor offers a drain-source voltage of 600V and a continuous drain current of 4A, making it suitable for power management and high-voltage switching circuits.

Key Features :

• High Voltage Capability: With a drain-source breakdown voltage of 600V, suitable for high-voltage applications.
• Moderate Current Handling: Supports a continuous drain current of up to 4A.
• Thermal Efficiency: TO-220AB package provides efficient thermal management.
• Low On-Resistance: Offers low R_DS(on) for reduced power losses.
• Avalanche Rated: Can handle transient high-voltage conditions reliably.
• Wide Operating Temperature Range: Operates from -55C to +150C.