P24N60DM2, N-Channel Power MOSFET, TO-220

The P24N60DM2 is an N-channel MOSFET designed for efficient high-voltage switching. Based on STMicroelectronics’ FDmesh™ II Plus low Qg technology, it supports fast switching speeds and improved performance in power supplies, inverters, and motor drivers. The TO-220 package makes it suitable for applications needing strong thermal management and easy mounting to heatsinks.

Key Features:

• High Voltage Rating: Can handle drain-source voltages up to 600V.
• Moderate Drive Capability: Continuous drain current rated at 18A.
• Efficient Switching: Low total gate charge (Qg = 29nC) allows fast transitions.
• Low On-Resistance: RDS(on) as low as 0.175 Ω for reduced conduction loss.
• Robust Energy Handling: Avalanche energy rating up to 180 mJ.
• TO-220 Package: Through-hole style with excellent thermal dissipation.

Additional Specifications:

• Mounting Style: Through-Hole
• Continuous Current Drain (Id): 18A
• Drain-Source Breakdown Voltage (Vds): 600V
• Gate-Source Threshld Voltage (Vgs th): 3-5V
• Power Dissipation: 150W
• Operating Temprature: -55+150°C