BUT12A ,NPN Silicon Transistor, TO-220 Package, 1000V/8A

The BUT12A is a high-performance NPN silicon transistor housed in a durable TO-220 package. Designed for high-voltage power switching applications, it features an exceptional collector-base voltage rating of 1000V and a continuous collector current of 8A, making it suitable for demanding power circuits. Its fast switching speeds, with a turn-on time of 4us and a turn-off time of 0.8us, enhance operational efficiency in high-speed applications.

With a power dissipation capacity of 100W and the ability to operate across a wide temperature range of -65C to 175C, this transistor ensures reliable performance in diverse environments. The BUT12A is ideal for applications such as electronic ballasts, high-voltage power supplies, and other power management systems requiring robust and efficient switching.

Key Features :

• High Voltage Capability: With a collector-base voltage rating of up to 1000V, the BUT12A ensures excellent performance in high-voltage applications.
• High Current Handling: Supports a continuous collector current of 8A, suitable for robust power circuits.
• Low Switching Times: Achieves fast turn-on time (4us) and turn-off time (0.8us) for efficient operation in switching applications.
• High Power Dissipation: Can dissipate up to 100W at 25C case temperature, ideal for high-power applications.
• Durable Design: Operates reliably across a wide temperature range of -65C to 175C junction temperature.
• Optimized Package: TO-220 package provides ease of mounting and heat dissipation.