BUP212, N-Channel IGBT with Low Forward Voltage Drop, TO-220

The BUP212 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in switch-mode power supplies (SMPS), motor drives, and other power conversion circuits.

With a Collector-Emitter Voltage (V_CE) rating of 1200V and a Continuous Collector Current of 22A at 25°C, the BUP212 provides robust performance for demanding applications. Its low forward voltage drop minimizes conduction losses, enhancing overall efficiency.

The device's high switching speed and low tail current make it suitable for high-frequency applications. Additionally, the BUP212 is latch-up free and avalanche rated, ensuring reliable operation under various conditions. Encased in a standard TO-220 package, the BUP212 offers ease of integration into various circuit designs, providing efficient heat dissipation and reliable performance.

• High Voltage Rating: Collector-Emitter Voltage (V_CE) of 1200V, suitable for high-voltage applications.
• Moderate Current Capability: Continuous Collector Current of 22A at 25°C, accommodating various power requirements.
• Low Forward Voltage Drop: Minimizes conduction losses, enhancing overall efficiency.
• High Switching Speed: Optimized for fast operation, improving performance in dynamic applications.
• Low Tail Current: Reduces switching losses, contributing to higher efficiency.
• Latch-Up Free and Avalanche Rated: Ensures robust performance under various operating conditions.