2N6661, N-Channel Power MOSFET,TO-39

The 2N6661 is an N-channel MOSFET specifically designed for low-power switching and signal applications in logic-level circuits. With a breakdown voltage of 90V and an Id rating of 0.9A, it's ideal for driving small inductive loads like relays, lamps, or solenoids in battery-powered or low-voltage systems. Packaged in TO-205AD (TO-39), it offers robust mechanical properties and excellent heat dissipation for military, aerospace, or industrial-grade environments.

Key Features:

• Logic-Level Drive: Operates with low gate voltages, directly interfaced with TTL/CMOS.
• Compact Metal Can Package: TO-205AD provides high reliability and good thermal conductivity.
• Low On-Resistance: As low as 3.6 Ω at Vgs = 10V, minimizing conduction losses in small load circuits.
• Fast Switching Speed: 6 ns switching for high-speed switching applications.
• Wide Temperature Range: Reliable operation from -55°C to +150°C.
• Low Gate Threshold Voltage: Enables operation from as low as 0.8V Vgs(th).

Additional Specifications:

• Mounting Style: Through Hole
• Continuous Current Drain (Id): 0.9A
• Drain-Source Breakdown Voltage (Vds): 90V
• Gate-Source Threshld Voltage (Vgs th): 0.8-2V
• Power Dissipation: 6.25W
• Operating Temprature: -55+150°C