IRFB4229,N-Channel Power MOSFET, 200V, 120A,TO-220-3

The IRFB4229 TO-220-3 is a high-performance N-channel power MOSFET designed for applications that require high current capacity and voltage handling. With a Drain-Source Breakdown Voltage (Vds) of 200V and a Continuous Drain Current (Id) of up to 120A, this MOSFET is ideal for use in power supply systems, motor control circuits, and other high-power industrial applications.

The TO-220-3 package offers excellent heat dissipation, making it perfect for designs where thermal management is critical. The low Gate-Source Threshold Voltage (Vgs th) of 2V to 4V ensures fast switching and easy control, enhancing the efficiency of the overall system. With a Power Dissipation rating of up to 300W, the IRFB4229 can handle heavy loads without sacrificing performance or reliability.

Designed to operate across a wide Operating Temperature Range from -55C to +175C, the IRFB4229 is built to withstand harsh environments, ensuring stability and long-term performance in both commercial and industrial settings. Whether used in motor drivers, DC-DC converters, or power inverters, this MOSFET delivers high-efficiency switching and reliable power management.

• High Current Capacity: Supports up to 120A continuous drain current, ideal for high-power applications.
• High Voltage Rating: Handles up to 200V Drain-Source Breakdown Voltage (Vds), suitable for switching and power management in high-voltage systems.
• Low Rds(on): Ensures minimal energy loss, improving overall efficiency in power supply systems.
• TO-220-3 Package: Provides excellent thermal management, making it ideal for high-current designs.
• Fast Switching Performance: Optimized for high-speed switching applications like motor control, power supplies, and DC-DC converters.
• Low Gate Charge: Reduces the required gate drive power, making the MOSFET efficient and easy to drive with logic-level signals.