2SK2850,Power MOSFET,N-Channel,900V,6A-TO-3P Package

The 2SK2850 Power MOSFET is a high-performance N-Channel enhancement mode power MOSFET manufactured by Fuji Electric Co., Ltd. Designed for high-voltage switching applications, it features a robust drain-source voltage rating of 900V and a continuous drain current of 6A. With its TO-3P package, this MOSFET ensures excellent thermal performance and durability, making it suitable for demanding environments and applications.

• High Voltage Rating: Drain-Source Voltage (Vds) rated at 900V for high-voltage applications.
• Robust Current Handling: Continuous Drain Current (Id) of 6A and Pulsed Drain Current of 24A for high-power circuits.
• Low On-State Resistance: Rds(on) of 2.5Ohm (max) at Vgs = 10V ensures minimal power loss.
• TO-3P Package: Provides excellent thermal management and robust mechanical performance.
• Wide Temperature Range: Operates from -55C to 150C, ensuring reliability in extreme environments.
• High Avalanche Energy: 277 mJ for reliable operation during transient conditions.