NTE236, Silicon NPN Transistor, Final RF Power Output, 16W, 27MHz

The NTE236 is a silicon NPN transistor in a TO-220AB package designed for RF power output in high-frequency amplifier applications. With its high power gain of 12 dB and 16W power output at 27MHz, this transistor is ideal for Class AB amplifier configurations in the HF band. The device offers exceptional reliability and thermal efficiency, making it suitable for applications requiring consistent performance under demanding operating conditions.

Key Features :

• High power gain of 12 dB for superior amplification.
• Output power of 16W at 27MHz for Class AB amplifiers.
• Collector-Emitter voltage rating of 25V for high reliability.
• Wide operating junction temperature range from -55C to +150C.
• TO-220AB package ensures efficient heat dissipation.
• Designed for RF power applications in the HF band.