IRG4BC20UD, N-Channel UltraFast IGBT with Soft Recovery Diode, TO-220AB

The IRG4BC20UD is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed power switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), and other power conversion circuits.

With a Collector-Emitter Voltage (V_CES) rating of 600V and a Continuous Collector Current of 13A at 25°C, the IRG4BC20UD provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (V_CE(on)) of 1.85V at 6.5A minimizes conduction losses, enhancing overall efficiency.

The device's UltraFast switching capabilities make it suitable for high-frequency applications, while the integrated UltraFast Soft Recovery Diode enhances performance in various power applications. Encased in a standard TO-220AB package, the IRG4BC20UD offers ease of integration into various circuit designs, providing efficient heat dissipation and reliableKey Features :

• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 600V, suitable for high-voltage applications.
• Moderate Current Capability: Continuous Collector Current of 13A at 25°C, accommodating various power requirements.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(on)) of 1.85V at 6.5A, reducing conduction losses.
• UltraFast Switching Performance: Optimized for high operating frequencies between 8-40 kHz in hard switching and above 200 kHz in resonant mode.
• Integrated UltraFast Soft Recovery Diode: Enhances performance in various power applications by providing efficient freewheeling.
• Standard TO-220AB Package: Provides ease of integration into various circuit designs with efficient heat dissipation.