MMFT2955E,P-Channel Power MOSFET,60V,1A,SOT-223

The MMFT2955E is designed with features such as a silicon gate for fast switching speeds and low power dissipation. The SOT-223 package supports ease of reflow soldering and provides strong mechanical stress resistance to the die, enhancing reliability in industrial applications.

Key Features :

• P-Channel Power MOSFET for efficient switching applications.
• 60V Drain-Source Breakdown Voltage for medium-power applications.
• 1A Continuous Drain Current for reliable performance.
• Low RDS(on) (300 mΩ) for reduced conduction losses.
• Silicon Gate for fast switching speeds.
• SOT-223 Package for optimized thermal performance and compact design.