2SC4814, NPN Silicon Epitaxial Transistor, TO-220 Package

The 2SC4814 is an NPN silicon epitaxial transistor designed for high-speed switching applications. It features a low collector-emitter saturation voltage (V_CE(sat)) of ≤ 0.3 V at I_C = 1.5 A, ensuring efficient operation. The transistor offers a high DC current gain (h_FE) ranging from 300 to 1,200 at V_CE = 2.0 V and I_C = 1.0 A, providing strong amplification capabilities. An on-chip damper diode enhances performance in inductive load applications. With a collector-emitter voltage (V_CEO) of 100 V, the 2SC4814 is suitable for various power applications. The TO-220 package facilitates easy mounting and effective heat dissipation, making it a reliable choice for high-speed switching tasks.

• Low Collector-Emitter Saturation Voltage: V_CE(sat) ≤ 0.3 V at I_C = 1.5 A, I_B = 10 mA, ensuring efficient operation.
• High DC Current Gain (h_FE): 300 to 1,200 at V_CE = 2.0 V, I_C = 1.0 A, providing strong amplification capabilities.
• On-Chip Damper Diode: Enhances performance in inductive load applications.
• High-Speed Switching: Suitable for applications requiring rapid switching.
• High Collector-Emitter Voltage: V_CEO = 100 V, suitable for various power applications.
• TO-220 Package: Facilitates easy mounting and effective heat dissipation.