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K75EEL5,IKZ75N65EH5, TO-247, High-Speed 5 IGBT, 650V ,75A with RAPID 1 Antiparallel Diode

K75EEL5,IKZ75N65EH5, TO-247, High-Speed 5 IGBT, 650V ,75A with RAPID 1 Antiparallel Diode

SKU
SCTx1180
Part Number
IKZ75N65EH5
Brand:
Infineon
Categories:
Semiconductors, Transistors, IGBT
Delivery in 2-5 Weeks.
JOD 11.12
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The K75EEL5 is a high-speed 5th-generation Insulated Gate Bipolar Transistor (IGBT) in a TO-247 package, leveraging TRENCHSTOP™ 5 technology. It features a copacked RAPID 1 fast and soft antiparallel diode for enhanced efficiency in switching and resonant topologies. With a high collector-emitter voltage of 650V, a maximum collector current of 75A, and low switching losses, this IGBT is an excellent choice for high-frequency switching applications.

Its superior thermal characteristics, low gate charge, and high reliability make it ideal for demanding industrial environments such as uninterruptible power supplies, welding converters, and solar inverters.

Key Features :

  • High-speed TRENCHSTOP™ 5 IGBT technology for superior efficiency.
  • Copacked with RAPID 1 soft antiparallel diode.
  • Collector-emitter breakdown voltage (VCE): 650V.
  • High DC collector current: 75A (at 100°C).
  • Low gate charge for reduced switching losses.
  • Environmentally friendly: Pb-free, RoHS-compliant, and halogen-free.
More Information
Operating Temperature -40C To +175C
Mounting Style Through Hole
Max Voltage N/A
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Stock

Shipping Method

ETA

Cost

Available

Self Pickup

1-2 Day

Free

Available

Inside Jordan

1 - 3 Days

3 JOD / Free Above 100 JOD

pre-order

General

3-5 Weeks