HGTG30N60A4D, N-Channel IGBT with Anti-Parallel Hyperfast Diode, TO-247-3

The HGTG30N60A4D is an N-channel Insulated Gate Bipolar Transistor (IGBT) that combines the high input impedance of a MOSFET with the low on-state conduction losses of a bipolar transistor. This integration results in a device well-suited for high-voltage, high-frequency switching applications, such as switch-mode power supplies (SMPS). The inclusion of an anti-parallel hyperfast diode facilitates rapid commutation, enhancing efficiency in applications requiring fast switching. Its robust TO-247-3 package ensures effective thermal management, making it reliable under demanding conditions.​

Key Features:

• High Voltage Capability: Supports a collector-emitter voltage of up to 600 V, suitable for high-voltage applications.​
• High Current Handling: Capable of continuous collector current up to 75 A at 25°C.​
• Integrated Anti-Parallel Hyperfast Diode: Enhances performance in switching applications by facilitating rapid commutation.​
• Low Conduction Losses: Exhibits low collector-emitter saturation voltage, reducing power dissipation during conduction.​
• Fast Switching Performance: Optimized for high-frequency operations, with typical fall times around 60 ns at 125°C junction temperature.​
• Robust Package: Encased in a TO-247-3 package, providing efficient heat dissipation and ease of mounting.​

Additional Specifications:

• Mounting Style: Through Hole
• Collector-Emitter Voltage (VCEO) : 600V
• Maximum Gate Emitter Voltage: 20V
• Continuous Collector Current at 25 C: 75A
• Power Dissipation: 463W
• Operating Temperature Range: -55+150°C