GT35J321,Insulated Gate Bipolar Transistor IGBT,600V, 37A,TO-3P

The GT35J321 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for efficient and fast switching in current resonance inverter applications. Featuring Toshiba’s advanced IGBT technology, this transistor is known for its low saturation voltage and robust thermal performance. It includes a built-in freewheeling diode between the emitter and collector for added protection. The TO-3P package is ideal for applications requiring high power dissipation and compact designs, such as motor drives, power supplies, and industrial systems.

With its capability to handle a maximum collector current of 37A and pulse currents up to 100A, the GT35J321 ensures efficient switching and reliable operation, even in demanding conditions. It offers enhanced thermal characteristics, making it suitable for various applications where efficient heat dissipation is necessary. Additionally, this IGBT provides reliable performance across a wide temperature range, ensuring durability and long life in various electronic circuits.

• High Speed Switching: Achieves fast switching with a typical fall time of 0.19 μs at 50A, ideal for current resonance inverter applications.
• Low Saturation Voltage: Features a typical collector-emitter saturation voltage of 1.9V, ensuring efficient performance under load.
• Enhanced Durability: Built-in Freewheeling Diode for enhanced reliability and protection in inverter circuits.
• Wide Operating Temperature Range: Designed to function from -55°C to 150°C, suitable for diverse applications.
• Robust Construction: TO-3P package ensures better thermal management and ease of mounting.
• Safe and Reliable: Enhanced design and construction to handle up to 100A pulsed collector current.