NCE80TD65BT, N-Channel Trench FS II Fast IGBT, TO-247

The NCE80TD65BT is an N-Channel Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench Field Stop II (FS II) technology. This design offers superior conduction and switching performance, making it ideal for applications such as air conditioners, inverters, and motor drives.

With a Collector-Emitter Voltage (V_CES) rating of 650V and a Continuous Collector Current of 80A at 100°C, the NCE80TD65BT is designed to handle demanding power requirements. Its low Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.7V at 25°C minimizes conduction losses, enhancing overall efficiency.

The device's fast switching capabilities, characterized by a turn-on delay time of 19 ns and a turn-off delay time of 172 ns, make it suitable for high-speed applications. Encased in a standard TO-247 package, the NCE80TD65BT offers efficient heat dissipation and ease of integration into various circuit designs.

• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 650V, suitable for high-voltage applications.
• High Current Capability: Continuous Collector Current of 80A at 100°C, accommodating substantial power requirements.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.7V at 25°C, reducing conduction losses.
• Fast Switching Performance: Optimized for high-speed operation with a turn-on delay time (t_d(ON)) of 19 ns and turn-off delay time (t_d(OFF)) of 172 ns.
• Robust Design: Positive temperature coefficient in V_CE(sat) and high ruggedness ensure reliable performance under varying conditions.
• Standard TO-247 Package: Provides efficient heat dissipation and ease of integration into various circuit designs.