TK100E10N1,N-Channel MOSFET Transistor, 100V, 100A,TO-220-3

The TK100E10N1 is a high-performance N-channel MOSFET designed for power switching applications. With a drain-source voltage rating of 100V and a continuous drain current capability of 100A, this MOSFET is optimized for use in power supplies, motor drivers, and high-current switching circuits. Its low RDS(on) of 3.4mΩ ensures minimal power loss, improving system efficiency, and thermal management.

Housed in a TO-220-3 package, the TK100E10N1 offers excellent thermal characteristics and is 100% avalanche rated, ensuring reliable operation in harsh conditions. This MOSFET is ideal for applications that require high-speed switching, low conduction losses, and high power handling.

• High Current Capability: Continuous drain current of 100A, ideal for high-power applications.
• High Voltage Rating: Drain-source breakdown voltage (Vds) of 100V for a wide range of power switching applications.
• Low On-Resistance: RDS(on) of 3.4mΩ ensures efficient operation with minimized conduction losses.
• Avalanche Rated: 100% avalanche tested for enhanced durability and reliability under extreme conditions.
• Thermally Efficient TO-220-3 Package: Provides excellent heat dissipation, ensuring stable operation in power-intensive circuits.
• Wide Temperature Range: Operating temperature range from -55C to 150C, suitable for industrial and commercial applications.