IRGPS4067D TO-247-3,Insulated Gate Bipolar Transistor (IGBT), 600V,240A

The IRGPS4067D is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for a wide range of power switching applications. It features a VCES of 600V and a continuous collector current of up to 240A. Utilizing low VCE(on) trench technology, this IGBT minimizes switching losses, making it ideal for high-efficiency and high-power switching applications. It includes an ultrafast soft recovery diode that improves rugged transient performance, ensuring greater reliability. With an industry-standard TO-247-3 package, it is suitable for applications requiring excellent current sharing and low EMI emissions.

• Type: N-Channel IGBT with ultrafast soft recovery diode
• VCEO Max: 600V
• Output Current: 240A continuous at 25°C
• Low VCE(on): 1.7V typical at 120A
• High efficiency in switching applications
• Lead-free and RoHS compliant