TSM60NB190C, N-Channel Power MOSFET, TO-220

The TSM60NB190C is an N-Channel Power MOSFET designed for high-voltage and high-speed power switching applications. With a drain-source voltage rating of 600V and continuous drain current capability of 18A, it is well-suited for use in power supplies, AC/DC LED lighting, and other high-power circuits. The device's low on-resistance and fast switching characteristics contribute to efficient performance, while the TO-220 package ensures effective thermal management.​

Key Features:

• High Voltage Capability: Withstands drain-source voltages up to 600V, suitable for high-voltage applications.​
• Significant Current Handling: Supports continuous drain currents up to 18A at 25°C.​
• Low On-Resistance: Features a maximum R_DS(on) of 0.19Ω at V_GS = 10V, ensuring efficient operation.​
• Fast Switching Performance: Designed for rapid switching applications, enhancing efficiency.​
• Robust Operating Temperature Range: Operates reliably within a junction temperature range of -55°C to +150°C.​
• TO-220 Package: Provides efficient heat dissipation and ease of mounting.​

Additional Specifications:

• Mounting Style: Through-Hole
• Continuous Current Drain (Id): 18A
• Drain-Source Breakdown Voltage (Vds): 600V
• Gate-Source Threshld Voltage (Vgs th): 2-4V
• Power Dissipation: 150.6W
• Operating Temprature: -55+150°C