RJP30H1DPD, N-Channel IGBT with Fast Switching, TO-252

The RJP30H1DPD is an N-Channel Insulated Gate Bipolar Transistor (IGBT) optimized for high-speed switching applications. Using trench gate and thin wafer technology (G6H-II series), this IGBT achieves low conduction losses while maintaining excellent switching speed and efficiency.

With a Collector-Emitter Voltage (V_CES) of 360V and a Continuous Collector Current of 30A at 25°C, the RJP30H1DPD is designed for applications requiring reliable and efficient switching, such as power inverters, motor drivers, plasma display panels (PDPs), and uninterruptible power supplies (UPS).

The device features a low Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.5V, which helps minimize conduction losses, while its fast switching times (80ns rise, 150ns fall) make it well-suited for high-frequency power circuits.

The TO-252 (DPAK) surface-mount package provides a compact footprint, enabling efficient PCB integration and enhanced heat dissipation, making it a preferred choice for space-constrained and power-efficient designs.

• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 360V, ideal for medium-voltage applications.
• High Current Capability: Continuous Collector Current of 30A at 25°C, ensuring robust power handling.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.5V, minimizing conduction losses.
• Fast Switching Performance: Optimized for high-speed operation with rise time (t_r) of 80 ns and fall time (t_f) of 150 ns.
• Surface-Mount TO-252 (DPAK) Package: Provides compact footprint, ease of PCB integration, and effective heat dissipation.
• Low Leakage Current: Maximum Collector Cutoff Current (I_CES) of 1 μA, ensuring minimal off-state losses.