IRGP4266D, N-Channel IGBT with Ultrafast Soft Recovery Diode, TO-247AC

The IRGP4266D is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-speed power switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in industrial motor drives, uninterruptible power supplies (UPS), solar inverters, and welding equipment.

With a Collector-Emitter Voltage (V_CES) rating of 650V and a Continuous Collector Current of 90A at 100°C, the IRGP4266D provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (V_CE(on)) of 1.7V at 75A minimizes conduction losses, while its fast switching capabilities ensure efficient high-speed operation.

The device is designed to withstand short circuit conditions for up to 5.5µs, enhancing its reliability in fault scenarios. Additionally, it features an integrated ultrafast soft recovery anti-parallel diode, improving overall performance in switching applications.

Encased in a TO-247AC package, the IRGP4266D offers ease of integration into various circuit designs.

• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 650V, suitable for medium to high-voltage applications.
• High Current Capability: Continuous Collector Current of 90A at 100°C, accommodating substantial power requirements.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(on)) of 1.7V at 75A, reducing conduction losses.
• Fast Switching Performance: Designed for high-speed operation with low switching losses, enhancing efficiency in switching applications.
• Short Circuit Capability: 5.5µs short circuit withstand time, enhancing reliability in fault conditions.
• Integrated Ultrafast Soft Recovery Diode: Features an ultrafast soft recovery anti-parallel diode for improved performance.