FQPF18N50, N-Channel MOSFET,TO-220F,500V,18A

The FQPF18N50 is a high-performance N-channel MOSFET designed for high-speed switching in high-voltage applications. With a drain-source voltage rating of 500V and a continuous drain current of 18A, this MOSFET is optimized for use in power electronics such as switch-mode power supplies (SMPS), electronic ballasts, and power factor correction circuits. Its low RDS(on) of 0.265Ohm ensures efficient performance and reduced power losses.

Housed in a TO-220F package, the FQPF18N50 offers excellent thermal management and is ideal for high-efficiency power supply designs where low RDS(on) and fast switching are required.

• High Voltage Capability: Supports up to 500V drain-source breakdown voltage, suitable for high-voltage applications.
• Current Rating: Continuous drain current of 18A at 25C, designed for medium-to-high power applications.
• Low On-Resistance: RDS(on) of 0.265Ohm ensures minimized conduction losses and improved efficiency.
• Fast Switching: Optimized for high-speed switching with low gate charge of 42nC.
• High Power Dissipation: Can dissipate up to 69W, ensuring reliable performance in power circuits.
• Applications: Suitable for switch-mode power supplies (SMPS), electronic ballasts, and power factor correction circuits.