2SC1953-S ,NPN Silicon Power Transistor, TO-126, 50mA Current Gain Range

The 2SC1953-S is a high-quality silicon NPN power transistor designed for low-frequency power pre-amplification and amplification. This transistor features a TO-126 package and offers exceptional stability, high collector-emitter voltage handling, and enhanced performance. It is particularly well-suited for low-frequency signal amplification applications where precision and reliability are required. The 2SC1953-S variant has a higher current gain classification (hFE) ranging from 185 to 330, ensuring its effectiveness in circuits demanding higher amplification.

With a peak collector current of 100mA and the ability to handle up to 150V collector-emitter voltage, the 2SC1953-S delivers robust performance. Its TO-126 package design allows for efficient heat dissipation, enhancing durability and reliability under varied operating conditions.

Whether you're working on low-frequency amplification or other power transistor applications, the 2SC1953-S provides an optimal balance of performance and reliability.

Key Features :

• High current gain range (hFE) of 185 to 330, suitable for precision applications.
• Capable of handling a collector-emitter voltage (VCEO) up to 150V.
• Compact TO-126 package for efficient heat dissipation.
• Maximum collector current (IC) of 50mA, with a peak of 100mA.
• Wide operating temperature range from -55°C to +150°C, ensuring stability in varied conditions.
• Designed for low-frequency power pre-amplification applications.