The K4D263238M-QC50 is a 128Mbit (4M x 32-bit) Double Data Rate Synchronous DRAM (DDR SDRAM) developed by Samsung. This memory module is designed for high-speed computing, graphics processing, and networking applications, requiring high bandwidth and fast access speeds.
With a data rate of up to 444Mbps per pin, the K4D263238M-QC50 achieves 1.8GB/s total bandwidth per chip, making it ideal for graphics accelerators, gaming consoles, and multimedia devices.
The on-chip DLL (Delay-Locked Loop) ensures precise clock-to-data alignment, improving overall system stability and performance. The memory also features bi-directional data strobes (DQS) to synchronize data input and output.
Designed for low power consumption, the K4D263238M-QC50 operates at 2.5V ± 5%, reducing heat and improving energy efficiency in portable and embedded systems.
The device supports auto and self-refresh operations, ensuring data retention and stability with a 32ms refresh cycle for all 4,096 cycles.
Encased in a QFP-100 package, this memory module offers a compact, surface-mount solution for space-constrained circuit board designs, making it highly suitable for high-performance computing, networking, and multimedia applications.
Key Features :- 128Mbit DDR SDRAM: Organized as 4M x 32-bit, providing high-speed, efficient memory storage.
- High-Speed Performance: Supports data rates up to 444Mbps per pin, ensuring fast data transfers.
- Low Power Operation: Operates at 2.5V ± 5%, optimizing power efficiency in high-performance applications.
- Programmable Burst Length: Configurable burst lengths of 2, 4, 8, and full-page mode for flexible data access.
- Advanced Timing Features: Equipped with on-chip Delay-Locked Loop (DLL) for improved data alignment.
- QFP-100 Package: Compact 100-pin Thin Quad Flat Pack (TQFP) for easy integration in space-constrained applications.
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