IR2101,High Voltage High-Speed Power MOSFET and IGBT Driver,600V,10-20V,DIP-8

The IR2101 DIP-8 is a high-voltage, high-speed power MOSFET and IGBT driver featuring independent high and low side referenced output channels. It is designed for driving N-channel MOSFETs or IGBTs in a high-side configuration that operates up to 600 volts. With its robust features including a gate drive supply range of 10V to 20V, matched propagation delay for both channels, and Schmitt-triggered input logic, this device provides reliable and efficient operation. Its ruggedized monolithic construction ensures durability, making it suitable for a wide range of applications including power supplies, motor control, and more.

• High Voltage & High-Speed Driver: Operates at voltages up to 600V, ideal for high-speed power MOSFET and IGBT driving applications.
• Gate Drive Supply Range: Supports a wide supply range from 10V to 20V for flexible usage.
• Independent High and Low Side Output Channels: Offers independent control for high-side and low-side output channels.
• Schmitt-Triggered Inputs: Ensures compatibility with standard CMOS or LSTTL outputs.
• Matched Propagation Delay: Both channels have matched delay for synchronized operation.
• Ruggedized Monolithic Construction: Built with proprietary HVIC and latch immune CMOS technologies for durability.