SI4485DY, P-Channel 30V MOSFET, SO-8 Package

The SI4485DY is a P-Channel enhancement mode MOSFET designed for efficient switching applications. With a drain-source voltage rating of -30 V and a continuous drain current of -6 A, it is well-suited for moderate power applications. The MOSFET's low on-resistance of 0.042 Ω at V_GS = -10 V reduces conduction losses, while its low total gate charge of 7 nC facilitates fast switching, enhancing overall system efficiency. Encased in a compact SO-8 package, the SI4485DY is ideal for space-constrained designs. Additionally, it is halogen-free, adhering to environmental standards, and has undergone 100% R_g testing to ensure reliability and performance consistency.

• Low On-Resistance: R_DS(on) of 0.042 Ω at V_GS = -10 V, minimizing conduction losses.
• High Continuous Drain Current: Rated at -6 A, suitable for moderate power applications.
• Low Gate Charge: Total gate charge (Q_g) of 7 nC, enabling fast switching.
• Compact SO-8 Package: Ideal for space-constrained designs.
• Halogen-Free: Compliant with IEC 61249-2-21 standards, environmentally friendly.
• 100% R_g Tested: Ensures device reliability and performance consistency.