The MB8116E is a 16Kbit (16,384 x 1-bit) Dynamic Random-Access Memory (DRAM) designed for use in high-speed computing, buffer memory, and industrial applications. Built using NMOS technology with double-layer polysilicon, this DRAM provides a compact, high-performance memory solution.
Featuring a multiplexed row and column address bus, the MB8116E reduces the number of required address pins, making it ideal for memory expansion in space-constrained applications. The on-chip sense amplifiers and refresh circuitry ensure reliable operation, requiring a 128-cycle refresh every 2ms to maintain stored data.
With a fast 200ns access time, the MB8116E ensures stable performance for vintage computers, industrial automation systems, and embedded control units. The device supports various operating modes, including read-modify-write, page-mode, and RAS-only refresh, allowing flexibility for different memory architectures.
The low power consumption and DIP-16 package make the MB8116E an excellent choice for legacy system upgrades and applications requiring reliable high-speed volatile memory.
Key Features :- 16Kbit Dynamic RAM (DRAM): Organized as 16,384 x 1-bit, providing volatile memory for high-speed applications.
- Fast Access Time: Offers a 200ns read access time, making it suitable for vintage computing and industrial applications.
- Low Power Consumption: Operates at 452mW active power and 20mW standby power, optimizing energy efficiency.
- Multiplexed Addressing: Uses a 7-bit row and 7-bit column address scheme, minimizing pin count and simplifying PCB design.
- Industry-Standard DIP-16 Package: Compatible with legacy computing systems and embedded applications.
- On-Chip Refresh and Sense Amplifiers: Supports 128-cycle refresh within 2ms, ensuring reliable data retention.
UAE (INT)
