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The IRFD110 is a high-performance N-Channel MOSFET designed for applications requiring reliable power switching and control. Packaged in a compact HEXDIP form factor, this MOSFET allows for multiple stacking configurations on boards with 0.1 pin centers. Its robust 100V drain-to-source breakdown voltage and low Rds(on) of 0.54 Ohms ensure efficient operation in a variety of circuits.
With a continuous drain current of 0.71A at 25C and a pulsed drain current capacity of 2.8A, the IRFD110 is suitable for switching and amplification in power circuits. Its maximum junction temperature of 175C and avalanche energy handling of 140mJ make it a highly durable choice for demanding environments. This MOSFET is RoHS-compliant, ensuring eco-friendly usage.Key Features :
Operating Temperature | -55C To 175C |
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Mounting Style | Through Hole |
Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1-2 Day |
Free |
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Available |
Inside Jordan |
1 - 3 Days |
3 JOD / Free Above 100 JOD |
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pre-order |
General |
3-5 Weeks |