IRFD110,N-Channel MOSFET,100V,0.54Ohms

The IRFD110 is a high-performance N-Channel MOSFET designed for applications requiring reliable power switching and control. Packaged in a compact HEXDIP form factor, this MOSFET allows for multiple stacking configurations on boards with 0.1 pin centers. Its robust 100V drain-to-source breakdown voltage and low Rds(on) of 0.54 Ohms ensure efficient operation in a variety of circuits.

With a continuous drain current of 0.71A at 25C and a pulsed drain current capacity of 2.8A, the IRFD110 is suitable for switching and amplification in power circuits. Its maximum junction temperature of 175C and avalanche energy handling of 140mJ make it a highly durable choice for demanding environments. This MOSFET is RoHS-compliant, ensuring eco-friendly usage.

Key Features :

• Compact HEXDIP package for easy insertion and board stacking.
• N-Channel MOSFET with 100V drain-to-source breakdown voltage.
• Low Rds(on) of 0.54 Ohms at Vgs = 10V.
• Continuous drain current capability of 0.71A at 25C.
• Maximum junction temperature rating of 175C for reliability.
• Ideal for high-speed switching with low gate charge (2.3nC typical).