IRL540N, HEXFET Power MOSFET, 100V, 30A, 0.044Ω RDS(on), TO-220-3

The IRL540N is a logic-level HEXFET® power MOSFET designed for fast switching and low on-resistance applications. It operates with a drain-to-source breakdown voltage of 100V and can handle continuous drain currents of up to 30A at Vgs = 10V. The low RDS(on) value of 0.044Ohm makes it ideal for high-efficiency switching applications.

Key Features :

• High Drain Current: Supports a continuous drain current of up to 30A at Vgs = 10V, ensuring suitability for power-hungry applications.
• Low On-Resistance: With a typical RDS(on) of 0.044Ohm, the IRL540N offers low conduction losses, optimizing efficiency.
• Fast Switching: Capable of a fast rise time of 81ns and fall time of 62ns, enabling rapid switching in high-frequency circuits.
• Fully Avalanche Rated: The device is rated for avalanche energy, providing robustness in demanding applications.
• Isolated Package: The TO-220 package offers thermal isolation with low thermal resistance.
• High Voltage Capability: Supports a drain-to-source voltage of 100V, ideal for high-voltage applications.