KM41256-12, 256Kbit (256K x 1) NMOS Dynamic RAM, DIP-16

The KM41256-12 is a 256Kbit (256K x 1-bit) NMOS Dynamic Random-Access Memory (DRAM) developed by Samsung Semiconductor. It is designed for applications requiring fast access times and efficient memory storage, making it ideal for computing and electronic systems.

Operating with a single +5V power supply, the KM41256-12 offers a 120ns access time, ensuring quick data retrieval. It supports Page and Nibble modes, allowing for faster data access and improved system performance.

The DIP-16 package allows for straightforward integration into various hardware configurations, providing flexibility for designers. With its combination of speed, efficiency, and ease of use, the KM41256-12 is a reliable choice for a wide range of electronic applications.

• 256Kbit NMOS DRAM: Organized as 256K x 1-bit, providing efficient volatile memory storage.
• Fast Access Time: Offers a 120ns access time, suitable for high-speed applications.
• Page/Nibble Mode: Supports Page and Nibble modes for faster data access.
• Single 5V Power Supply: Operates at +5V, compatible with standard logic circuits.
• Low Power Consumption: Designed for energy-efficient performance, ideal for various electronic applications.
• DIP-16 Package: Standard 16-pin Dual In-Line Package for easy integration into various systems.