HM5118165J-6, 16Mbit (1M x 16) EDO DRAM, 60ns Access Time, 5V

The HM5118165J-6 is a 16Mbit (1M x 16-bit) Extended Data Out (EDO) DRAM designed for high-speed and low-power applications. Using advanced CMOS technology, it ensures high reliability and efficient memory performance in computing and industrial systems.

With a 60ns access time, this DRAM enables faster read and write cycles, making it ideal for applications requiring high-speed data processing. The EDO page mode support improves overall system performance by allowing continuous data flow without the need for repeated addressing.

The HM5118165J-6 operates at a single 5V power supply, ensuring low power consumption while maintaining high performance. It features four types of refresh options: RAS-only refresh, CAS-before-RAS refresh, hidden refresh, and self-refresh (L-version), enabling flexibility in memory management.

Encased in a SOJ-42 package, this DRAM is commonly used in embedded systems, legacy computing, industrial control, and telecommunications equipment requiring high-speed, efficient memory solutions.

• 16Mbit EDO DRAM: Organized as 1M x 16-bit, providing high-capacity volatile memory storage.
• Fast Access Time: Offers a 60ns access time, making it suitable for high-performance computing.
• Extended Data Out (EDO) Mode: Supports faster memory access with EDO page mode, improving system efficiency.
• Single 5V Power Supply: Operates at 5V ±10%, ensuring compatibility with standard logic circuits.
• Low Power Consumption: Includes power-saving standby mode, making it ideal for embedded and industrial applications.
• SOJ-42 Package: Surface-mounted 400-mil 42-pin plastic SOJ for compact and durable integration.