FDS8978, Dual N-Channel PowerTrench® MOSFET, SO-8 Package

The FDS8978 is a dual N-channel enhancement mode PowerTrench® MOSFET designed for low to medium voltage, high-speed switching applications. With a drain-source voltage rating of 30 V and a continuous drain current of 7.5 A, it is well-suited for applications such as DC-DC converters, load switches, and power management in portable devices. The MOSFET's low on-resistance of 0.022 Ω reduces conduction losses, while its fast switching capabilities enhance performance in high-speed circuits. The device features a low total gate charge of 11 nC, minimizing driving requirements and improving overall efficiency. Encased in a compact SO-8 package, the FDS8978 offers efficient heat dissipation and is suitable for space-constrained designs.

• Low On-Resistance: R_DS(on) of 0.022 Ω at V_GS = 10 V, minimizing conduction losses.
• High Drain-Source Voltage: Withstands up to 30 V, suitable for low to medium voltage applications.
• High Continuous Drain Current: Rated at 7.5 A, ideal for moderate power requirements.
• Fast Switching Speed: Optimized for rapid switching applications, enhancing efficiency.
• Low Gate Charge: Total gate charge of 11 nC, reducing driving requirements and improving performance.
• Compact SO-8 Package: Facilitates space-saving designs and efficient heat dissipation.