D41256C-10, 256K-bit (256K x 1) NMOS Dynamic RAM, DIP-16

The D41256C-10 is a high-speed NMOS Dynamic Random-Access Memory (DRAM) with a capacity of 256K bits, organized as 256K x 1-bit. This configuration makes it suitable for a wide range of applications, including main memory in computers, buffer memory in peripherals, and storage for microprocessor-based systems.

With a 100ns access time, the D41256C-10 ensures rapid data access, enhancing system performance in time-critical applications. It operates on a single +5V power supply, ensuring compatibility with standard TTL logic levels.

The DRAM requires periodic refresh cycles to maintain data integrity, a standard characteristic of dynamic memory. Its low power consumption design is particularly beneficial for battery-operated devices, contributing to extended operational life.

Encased in a 16-pin Dual In-Line Package (DIP-16), the D41256C-10 offers a compact and reliable solution for various electronic designs, ensuring ease of integration into through-hole circuit boards.

• 256K-bit NMOS Dynamic RAM: Organized as 256K x 1-bit, providing efficient volatile memory storage.
• 100ns Access Time: Ensures high-speed performance for various computing applications.
• Single 5V Power Supply: Operates at +5V, compatible with standard TTL logic levels.
• Refresh Requirement: Supports refresh cycles to maintain data integrity.
• Compact DIP-16 Package: Encased in a 16-pin Dual In-Line Package (DIP) for easy integration into through-hole designs.
• Low Power Consumption: Designed for energy efficiency, suitable for battery-powered devices.