CA3127E, High-Frequency NPN Transistor Array, DIP-16

The CA3127E is a high-frequency NPN transistor array consisting of five general-purpose silicon NPN transistors on a common monolithic substrate. Each transistor is completely isolated and exhibits low 1/f noise with a Gain Bandwidth Product (f_T) exceeding 1GHz, making the CA3127E useful from DC to 500MHz. Access is provided to each of the terminals for the individual transistors, and a separate substrate connection has been provided for maximum application flexibility. The monolithic construction provides close electrical and thermal matching of the five transistors, making it suitable for applications such as VHF amplifiers, RF mixers/oscillators, sense amplifiers, synchronous detectors, and IF converters.

• Gain Bandwidth Product (f_T) exceeding 1GHz.
• Power Gain of 30dB (Typ) at 100MHz.
• Noise Figure of 3.5dB (Typ) at 100MHz.
• Five independent NPN transistors on a common monolithic substrate.
• Low 1/f noise characteristics.
• Separate substrate connection for maximum application flexibility.