The W27E512P-12 is a 512Kbit Electrically Erasable Programmable Read-Only Memory (EEPROM) designed for high-speed and low-power applications. This memory device is organized as 64K × 8 bits and operates with a single 5V power supply for both reading and writing operations.
Unlike conventional UVEPROMs, which require ultraviolet light for erasure, the W27E512P-12 supports electrical erasure, significantly reducing erase times to 100ms, making it highly efficient for industrial, embedded, and computing applications.
The device features three-state outputs, making it compatible with TTL/CMOS logic. It supports chip erase functionality, allowing for bulk erasure of all stored data. The programming operation allows byte-wise data modification, ensuring precise data management.
With an endurance of 100,000 program/erase cycles and a data retention period of up to 20 years, the W27E512P-12 is ideal for applications requiring firmware storage, BIOS updates, industrial control systems, and embedded system development.
Key Features :- Electrically Erasable EPROM: 64K × 8-bit EEPROM that allows for electrical erasure and reprogramming, eliminating the need for UV erasure.
- High-Speed Performance: Offers multiple speed options, with a 120ns access time, making it suitable for fast data retrieval applications.
- Single 5V Power Supply: Operates with a single 5V power source, simplifying integration into existing circuits.
- Reliable Endurance: Supports up to 100,000 program/erase cycles, ensuring long-term reliability for industrial and embedded applications.
- Multiple Package Options: Available in PLCC-32, DIP-28, TSOP-28, and SOP-28 packages, providing flexibility in PCB design.
- Low Power Consumption: Features standby current of 1mA max and operating current of 30mA max, optimizing power efficiency.
UAE (INT)
